|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
PD - 50071C GA600GD25S SINGLE SWITCH IGBT DUAL INT-A-PAK Features * Standard speed, optimized for battery powered application * Very low conduction losses * HEXFREDTM antiparallel diodes with ultra-soft recovery * Industry standard package * UL recognition pending * Internal thermistor StandardTM Speed IGBT VCES = 250V VCE(on) typ. = 1.25V @VGE = 15V, IC = 600A Benefits * Increased operating efficiency * Direct mounting to heatsink * Performance optimized for power conversion: UPS, SMPS, Welding * Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25C ICM ILM IFM VGE VISOL PD @ TC = 25C PD @ TC = 85C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 250 600 1200 1200 1200 17 2500 1920 1000 -40 to +150 -40 to +125 Units V A V W C Thermal / Mechanical Characteristics Parameter RJC RJC RCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 Mounting Torque, Case-to-Terminal 3,4,5,6 Weight of Module Typ. -- -- 0.04 -- -- -- 365 Max. 0.065 0.20 -- 6.0 5.0 1.5 -- Units C/W N. m g www.irf.com 1 08/27/02 GA600GD25S Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES TDP R-T25 Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. 250 -- -- Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage -- Forward Transconductance -- Collector-to-Emitter Leaking Current -- -- Diode Forward Voltage - Maximum -- -- Gate-to-Emitter Leakage Current -- Pulse Diode Temp Rise -- Thermistor, Positive Temp Coefficient 738 Typ. Max. Units Conditions -- -- VGE = 0V, IC = 1mA 1.25 1.4 VGE = 15V, IC = 600A 1.25 -- V VGE = 15V, IC = 600A, TJ = 125C -- 6.0 IC = 5.0mA, VCE = 6.0V -11 -- mV/C VCE = 6.0V, I C = 5.0mA,TC= 25/125C 720 -- S VCE = 25V, I C = 600A -- 2.0 mA VGE = 0V, VCE = 250V -- 20 VGE = 0V, VCE = 250V, TJ = 125C 1.5 1.8 V IF = 300A, VGE = 0V 1.5 -- IF = 300A, VGE = 0V, TJ = 125C -- 1.0 A VGE = 14V (18V zeners gate-emitter) -- 80 C IC = 300A, t = 150msec, Tc =70C 820 902 I = 100mA,P = 2.5mW/C (see note 1) Dynamic Characteristics - TJ = 125C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 3825 555 1262 1060 950 846 934 17 105 122 86063 9754 1913 314 80 12513 632 Max. Units Conditions 5738 VCC = 200V, VGE = 15V 832 nC IC = 600A 1893 TJ = 25C -- RG1 = 15, RG2 = 0, -- ns IC = 600A -- VCC = 150V, Inductor load -- VGE = 15V -- mJ See Fig. 17, 19 -- 250 -- VGE = 0V -- pF VCC = 30V -- = 1 MHz -- ns IC = 600A -- A RG1 = 15 -- C RG2 = 0 -- A/s VCC = 150V di/dt = 500A/s Notes: 1. The thermistor has an average rate of change of 7 /C between 20C and 125C. Consult U.S. Sensor data sheet for P821GS1K for details 2 www.irf.com GA600GD25S 500 For both: 400 LOAD CURRENT (A) Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 333 W 300 Square wave: 60% of rated voltage 200 I 100 Ideal diodes 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 10000 10000 1000 I C , Collector-to-Emitter Current (A) I C , Collector Current (A) 1000 TJ = 125 C TJ = 125 C 100 100 TJ = 25 C 10 TJ = 25 C V GE = 15V 80s PULSE WIDTH 0.8 1.0 1.2 1.4 1.6 1.8 10 0.6 1 4.0 V CE = 25V 80s PULSE WIDTH 5.0 6.0 7.0 8.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA600GD25S 800 2.0 Maximum DC Collector Current(A) VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 1000A 1200 A 600 1.5 400 IC = 600 A IC = 300 A 1.0 200 0 25 50 75 100 125 150 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 0.1 Thermal Response (ZthJC ) D = 0.50 P DM 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) N otes: 1. Duty fa ctor D = t / t 12 t 1 t2 2. Peak T = PDMx Z thJC + TC J 0.01 0.0001 A 0.001 0.01 0.1 1 10 100 1000 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA600GD25S 160000 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 200V VCC = 250V 400V I C = 600A 16 C, Capacitance (pF) 120000 Cies 80000 12 8 Coes 40000 Cres 0 1 10 100 4 0 0 1000 2000 3000 4000 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 150 1000 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 150V V GE = 15V TJ = 25 C I C = 600A RG = 15; RG2 = 0 V GE = 15V V CC = 150V I C = 1000A 140 IC = 600A 130 100 I C = 300A 120 110 0 10 20 30 40 50 10 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 RG , Gate Resistance ( ) TJ , Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA600GD25S 320 IC , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG1 =15;RG2 = 0 RG = T J = 125 C VCC = 150V VGE = 15V 1500 VGE = 17V 20V TJ = 125C VCE measured at terminal ( Peak Voltage ) 1200 240 900 SAFE OPERATING AREA 160 600 80 300 0 0 200 400 600 800 1000 1200 0 0 100 200 A 300 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 1000 Fig. 12 - Reverse Bias SOA 20000 I F = 1000A Instantaneous Forward Current - I F (A) I F = 600A TJ = 125C TJ = 25C 100 16000 I F = 300A Q RR - (nC) 12000 8000 VR = 150V TJ = 125C TJ = 25C 10 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 4000 300 400 500 600 Forward Voltage Drop - V FM (V) di f /dt - (A/s) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 6 www.irf.com GA600GD25S 360 120 IF = 1000A IF = 600A 340 100 IF = 1000A IF = 600A IF = 300A I F = 300A 320 I IRRM - (A) VR = 150V TJ = 125C TJ = 25C t rr - (ns) 80 300 60 VR = 150V TJ = 125C TJ = 25C 400 500 600 40 300 400 280 300 di f /dt - (A/s) di f /dt - (A/s) 500 600 Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt www.irf.com 7 GA600GD25S 90% Vge V C 10% 90% td(off) 10% IC 5% t d(on) tr tf t=5s Eon Ets= (Eon +Eoff ) Eoff Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg trr Ic Qrr = trr id dt Ic dt tx tx 10% Vcc Vce 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic 10% Irr Vcc Vpk Irr Vcc DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce Ic Eon = Vce ie dt dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd idIc dt Vd dt t3 t1 t4 Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com GA600GD25S Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 17e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000F 100V Vc* D.U.T. RL= 0 - 150V 150V 2 X IC @25C Figure 18. Clamped Inductive Load Test Circuit Figure 19. Pulsed Collector Current Test Circuit www.irf.com 9 GA600GD25S Notes: Repetitive rating; VGE = 17V, pulse width limited by max. junction temperature. See fig. 17 For screws M6. Pulse width 50s; single shot. Case Outline -- DUAL INT-A-PAK x x 6 [ . 2 3 6 ] MAX. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/02 10 www.irf.com |
Price & Availability of GA600GD25S |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |